BF256A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate±Source Breakdown Voltage (±IG
= ±1.0
μAdc, VDS
= 0)
±V(BR)GSS
30
±
D
Vdc
Gate±Source Voltage (VDS
= 15 Vdc, I
D
= 200
μA)
±VGS
0.5
D
7.5
Vdc
Gate Reverse Current (±VGS
= 20 Vdc, V
DS
= 0)
±IGSS
D
D
5.0
nAdc
ON CHARACTERISTICS
Zero±Gate±Voltage Drain Current (Note 1.) (VDS
= 15 Vdc, V
GS
= 0)
IDSS
3.0
±
7.0
mAdc
SMALL±SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
|Yfs|
4.5
5.0
±
mmhos
Reverse Transfer Capacitance (VDS
= 20 Vdc, ±V
GS
= 1 Vdc, f = 1 MHz)
Crss
±
0.7
±
pF
Output Capacitance (VDS
= 20 Vdc, V
GS
= 0, f = 1 MHz)
Coss
±
1.0
±
pF
Cut±Off Frequency (Note 2.) (VDS
= 15 Vdc, V
GS
= 0)
fgfs
±
1000
±
MHz
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.
2. The frequency at which gfs is 0.7 of its value at 1 KHz.
0255
10
15 20 4 6 10 14 16 180
28 2012
5
IDSS, DRAIN CURRENT (mA) @ VGS
= 0
GATE±SOURCE CUTOFF VOLTAGE
(±V
GS(off)
@ I
D
= 10 nA)
0
VDS, DRAIN±TO±SOURCE VOLTAGE (VOLTS)
Figure 2. Correlation Between
±VGS(off)
and I
DSS
Figure 3. Drain Current versus
Drain±to±Source Voltage
I
D
, DRAIN CURRENT (mA)
1
6
±VGS
= 0 V
10
0
5
2
4
1
3
VDS
= 15 Vdc
4.5
1.5
3.5
0.5
2.5
0.2 V
0.4 V
2
3
4
8
9
7
BF256A
0.6 V
0.8 V
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
BF256C_J35Z
IC AMP RF N-CH 30V 10MA TO-92
BLC6G22LS-75,112
FET RF LDMOS 28V 690MA SOT896B
BXA-12379
INVERTER 12V TRIPLE OUTPUT CCFL
BXA-12529/PS1
INVERTER POTTED 850V CCFL LAMP
BXA-12529
INVERTER 1000V FOR CCFL UV LAMP
BXA-12549-6M
INVERTER DUAL DIMMING 12V INPUT
BXA-12553
INVERTER 700V FOR CCFL LAMP
BXA-12563
INVERTER DIMMING SGL OUTPUT CCFL
相关代理商/技术参数
BF256B
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_J35Z
功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_Q
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_J35Z
功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_Q
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF257
功能描述:两极晶体管 - BJT NPN High Voltage
RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
BF257CSM
制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN